Efficient Power Conversion Corporation’s (EPC) eGaN® Transistor Wins 2017 Impact Award from Electronics

November 1, 2017


EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation (EPC) is proud to announce that Electronic Component News (ECN) — a leading trade publication for electronic design engineers — has awarded the EPC2040 enhancement-mode gallium nitride (eGaN) transistor its ECN Impact Award for 2017 in the Passive Components and Discrete Semiconductors category.

The 15 V, 30 mΩ EPC2040 eGaN FET was recognized for its extremely fast and consistent switching, which enables greater resolution and accuracy in applications dependent upon pulsed laser drivers, which include LiDAR systems used for guidance in autonomous vehicles and augmented reality systems. In addition, the EPC2040 can be used in high-speed point-of-load conversion applications to reduce the size, height, and weight of next-generation mobile computing systems.

“We are honored that ECN magazine has selected the EPC2040 eGaN power transistor for this prestigious industry award. The Impact Award substantiates that gallium nitride technology continues to emerge as the performance leader in power conversion technology. Enabling applications such as LiDAR for self-driving vehicles and DC-DC conversion is proof that eGaN technology will lead the way for continued increases in performance in power transistors,” said Alex Lidow, EPC’s co-founder and Chief Executive Officer.

The 2017 ECN Impact Awards were announced at an awards dinner on October 22nd in Chicago and appear on their website at https://www.ecnawards.com/news/item/107/ecn-impact-awards-2017-announces-winners/

Pricing for the EPC2040 power transistors at 1K units is $0.71 each and are immediately available through Digi-Key Corporation at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en.

About EPC

EPC is the leader in enhancement-mode gallium nitride-based power management devices, having been the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.


About Electronic Component News (ECN)

ECN is the leading authority on new OEM products, tools, technologies, trends, and design intelligence for the global engineering community. With a legacy over 55 years, ECN is the electronic design community’s premier source for product information, news, and sharp editorial. In addition, ECN provides its engineering readership with value-added content such as staff-written and contributed application articles, product reviews, interviews, and roundtables, creating the most complete information resource for the EOEM design engineer.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.